Thermal stability of sputtered Mo/polyimide films and formation of MoSe2 and MoS2 layers for application in flexible Cu(In,Ga)(Se,S)2 based solar cells
Identifieur interne : 001348 ( Main/Repository ); précédent : 001347; suivant : 001349Thermal stability of sputtered Mo/polyimide films and formation of MoSe2 and MoS2 layers for application in flexible Cu(In,Ga)(Se,S)2 based solar cells
Auteurs : RBID : Pascal:12-0233747Descripteurs français
- Pascal (Inist)
- Propriété thermique, Stabilité thermique, Dépôt pulvérisation, Couche mince, Gallium, Cellule solaire, Epaisseur couche, Coefficient dilatation thermique, Traitement thermique, Facteur réflexion, Spectre réflexion, Résistivité électrique, Etat surface, Sulfuration, Molybdène, Imide polymère, Séléniure de molybdène, Sulfure de molybdène, Cuivre, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, MoSe2, MoS2, Mo, Substrat polymère, 6860D, 8115C, 8460J, 6855J.
- Wicri :
English descriptors
- KwdEn :
- Copper, Copper selenides, Electric resistivity, Gallium, Gallium selenides, Heat treatments, Indium selenides, Layer thickness, Molybdenum, Molybdenum selenides, Molybdenum sulfide, Polyimides, Reflection spectrum, Reflectivity, Solar cells, Sputter deposition, Sulfidation, Surface states, Thermal expansion coefficient, Thermal properties, Thermal stability, Thin films.
Abstract
Molybdenum (Mo) films with a thickness of about 800 nm were room temperature sputtered onto flexible polymeric substrates. Upilex® films were chosen as substrates on the basis of their high thermal endurance and reduced coefficient of thermal expansion. Thermal stability of Mo films has been proved by heat treatment of the Mo/Upilex® structures at a temperature comparable to that used in the preparation of the Cu(In,Ga)(Se,S)2 absorber layer. A combination of high optical reflectance (maximum values of 75-80%), low electrical resistivity (about 30 μΩ cm) and a smooth surface free of cracks for heated films highlights their good thermal stability. The formation of MoSe2 and MoS2 layers, after selenization/sulfurization of the Mo/Upilex® structures, has been further investigated in view of their application as back contact layers in flexible CIGS based solar cells.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Thermal stability of sputtered Mo/polyimide films and formation of MoSe<sub>2</sub> and MoS<sub>2</sub> layers for application in flexible Cu(In,Ga)(Se,S)<sub>2</sub> based solar cells</title><author><name sortKey="Bollero, A" uniqKey="Bollero A">A. Bollero</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Dep. of Energy, CIEMAT, Avda. Complutense 22</s1><s2>28040 Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="Kaupmees, L" uniqKey="Kaupmees L">L. Kaupmees</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dep. of Materials Science, Tallinn University of Technology (TUT), Ehitajate tee 5</s1><s2>Tallinn 19086</s2><s3>EST</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>Tallinn 19086</wicri:noRegion></affiliation></author><author><name sortKey="Raadik, T" uniqKey="Raadik T">T. Raadik</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dep. of Materials Science, Tallinn University of Technology (TUT), Ehitajate tee 5</s1><s2>Tallinn 19086</s2><s3>EST</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>Tallinn 19086</wicri:noRegion></affiliation></author><author><name sortKey="Grossberg, M" uniqKey="Grossberg M">M. Grossberg</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dep. of Materials Science, Tallinn University of Technology (TUT), Ehitajate tee 5</s1><s2>Tallinn 19086</s2><s3>EST</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>Tallinn 19086</wicri:noRegion></affiliation></author><author><name sortKey="Fernandez, S" uniqKey="Fernandez S">S. Fernandez</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Dep. of Energy, CIEMAT, Avda. Complutense 22</s1><s2>28040 Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0233747</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0233747 INIST</idno><idno type="RBID">Pascal:12-0233747</idno><idno type="wicri:Area/Main/Corpus">001D14</idno><idno type="wicri:Area/Main/Repository">001348</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper</term><term>Copper selenides</term><term>Electric resistivity</term><term>Gallium</term><term>Gallium selenides</term><term>Heat treatments</term><term>Indium selenides</term><term>Layer thickness</term><term>Molybdenum</term><term>Molybdenum selenides</term><term>Molybdenum sulfide</term><term>Polyimides</term><term>Reflection spectrum</term><term>Reflectivity</term><term>Solar cells</term><term>Sputter deposition</term><term>Sulfidation</term><term>Surface states</term><term>Thermal expansion coefficient</term><term>Thermal properties</term><term>Thermal stability</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété thermique</term><term>Stabilité thermique</term><term>Dépôt pulvérisation</term><term>Couche mince</term><term>Gallium</term><term>Cellule solaire</term><term>Epaisseur couche</term><term>Coefficient dilatation thermique</term><term>Traitement thermique</term><term>Facteur réflexion</term><term>Spectre réflexion</term><term>Résistivité électrique</term><term>Etat surface</term><term>Sulfuration</term><term>Molybdène</term><term>Imide polymère</term><term>Séléniure de molybdène</term><term>Sulfure de molybdène</term><term>Cuivre</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>MoSe2</term><term>MoS2</term><term>Mo</term><term>Substrat polymère</term><term>6860D</term><term>8115C</term><term>8460J</term><term>6855J</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Molybdène</term><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Molybdenum (Mo) films with a thickness of about 800 nm were room temperature sputtered onto flexible polymeric substrates. Upilex® films were chosen as substrates on the basis of their high thermal endurance and reduced coefficient of thermal expansion. Thermal stability of Mo films has been proved by heat treatment of the Mo/Upilex® structures at a temperature comparable to that used in the preparation of the Cu(In,Ga)(Se,S)<sub>2</sub> absorber layer. A combination of high optical reflectance (maximum values of 75-80%), low electrical resistivity (about 30 μΩ cm) and a smooth surface free of cracks for heated films highlights their good thermal stability. The formation of MoSe<sub>2</sub> and MoS<sub>2</sub> layers, after selenization/sulfurization of the Mo/Upilex® structures, has been further investigated in view of their application as back contact layers in flexible CIGS based solar cells.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>520</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Thermal stability of sputtered Mo/polyimide films and formation of MoSe<sub>2</sub> and MoS<sub>2</sub> layers for application in flexible Cu(In,Ga)(Se,S)<sub>2</sub> based solar cells</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>8th International Conference on Coatings on Glass and Plastics-ICCG8</s1></fA09><fA11 i1="01" i2="1"><s1>BOLLERO (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>KAUPMEES (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>RAADIK (T.)</s1></fA11><fA11 i1="04" i2="1"><s1>GROSSBERG (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>FERNANDEZ (S.)</s1></fA11><fA12 i1="01" i2="1"><s1>SZYSZKA (B.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>KONDRUWEIT (S.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>PUETZ (J.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Dep. of Energy, CIEMAT, Avda. Complutense 22</s1><s2>28040 Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Dep. of Materials Science, Tallinn University of Technology (TUT), Ehitajate tee 5</s1><s2>Tallinn 19086</s2><s3>EST</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>4163-4168</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000509677030140</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0233747</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Molybdenum (Mo) films with a thickness of about 800 nm were room temperature sputtered onto flexible polymeric substrates. Upilex® films were chosen as substrates on the basis of their high thermal endurance and reduced coefficient of thermal expansion. Thermal stability of Mo films has been proved by heat treatment of the Mo/Upilex® structures at a temperature comparable to that used in the preparation of the Cu(In,Ga)(Se,S)<sub>2</sub> absorber layer. A combination of high optical reflectance (maximum values of 75-80%), low electrical resistivity (about 30 μΩ cm) and a smooth surface free of cracks for heated films highlights their good thermal stability. The formation of MoSe<sub>2</sub> and MoS<sub>2</sub> layers, after selenization/sulfurization of the Mo/Upilex® structures, has been further investigated in view of their application as back contact layers in flexible CIGS based solar cells.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H60D</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="03" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Propriété thermique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Thermal properties</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Stabilité thermique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thermal stability</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Dépôt pulvérisation</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Sputter deposition</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Couche mince</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Thin films</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium</s0><s2>NC</s2><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium</s0><s2>NC</s2><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Solar cells</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Epaisseur couche</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Layer thickness</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Espesor capa</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Coefficient dilatation thermique</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Thermal expansion coefficient</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Coeficiente dilatación térmica</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Traitement thermique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Heat treatments</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Facteur réflexion</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Reflectivity</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Spectre réflexion</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Reflection spectrum</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Espectro reflexión</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Résistivité électrique</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Electric resistivity</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Etat surface</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Surface states</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Sulfuration</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Sulfidation</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Molybdène</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Molybdenum</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Imide polymère</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Polyimides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Séléniure de molybdène</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Molybdenum selenides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Sulfure de molybdène</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Molybdenum sulfide</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Molibdeno sulfuro</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>29</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>29</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>30</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>30</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>31</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>31</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>MoSe2</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>MoS2</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Mo</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Substrat polymère</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>6860D</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>6855J</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>177</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Coatings on Glass and Plastics-ICCG8</s1><s2>8</s2><s3>Braunschweig DEU</s3><s4>2010-06-13</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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